| 摘要 |
A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal layer made of the same material as the first metal layer on a second substrate; a first treatment step of heating and compressing together the first metal layer and the second metal layer placed opposite to each other, thereby bonding them with maintaining a junction interface between the first and second metal layers; and a second treatment step of heating the first and second metal layers to make the junction interface disappear. Either one of the first and second metal layers has a coarse surface having multiple pyramid-shaped protrusions formed at its surface. |
