Semiconductor device including a redistribution layer and metallic pillars coupled thereto

摘要

A semiconductor device and method of forming the same including, in one embodiment, a substrate (1105) and a plurality of source and drain regions (s, d) formed as alternating pattern on the substrate (1105). The semiconductor device also includes a plurality of gates (1150) formed over the substrate (1105) between and parallel to ones of the plurality of source and drain regions. The semiconductor device also includes a first plurality of alternating source and drain metallic strips (1111, 1121) formed in a first metallic layer above the substrate (1105) and parallel to and forming an electrical contact with respective ones of the plurality of source and drain regions.