| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method capable of forming a trench in a silicon semiconductor region of a workpiece.SOLUTION: A hard mask including a pattern for forming a trench is provided on a semiconductor region. A plasma etching method includes a step of generating plasma of a process gas containing a halogen-containing gas, an Ogas, and a CO gas in a processing container housing a workpiece and etching the semiconductor region. |
