发明名称 |
Film deposition assisted by angular selective etch on a surface |
摘要 |
An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material. |
申请公布号 |
GB2519888(B) |
申请公布日期 |
2017.01.11 |
申请号 |
GB20150002467 |
申请日期 |
2013.07.16 |
申请人 |
Veeco Instruments, Inc. |
发明人 |
Boris L Druz;Vincent IP;Adrian Devasahayam |
分类号 |
H01L21/203;C23C14/34;H01L21/30;H01L21/302 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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