| 摘要 |
A method of manufacturing a silicon carbide semiconductor device, having a silicon carbide semiconductor element substrate and a surface electrode film forming an ohmic contact between them. A first electrode film including nickel is formed on the substrate surface. A second electrode film with nickel silicide is formed on a first electrode film surface. The surface film is formed having the ohmic contact between the substrate surface and the first electrode film by annealing to cause silicon of the substrate and nickel of the first electrode film to react and convert the first electrode film to silicide. The first electrode film is formed with a thickness so that during annealing, an amount of carbon atoms is liberated from the substrate and diffuses toward the first electrode film, wherein the liberated amount is equal to or less than the amount of carbon atoms that the second electrode film is able to take in during annealing. |
