METHOD OF FORMING GRAPHENE NANOPATTERN, GRAPHENE-CONTAINING DEVICE, AND METHOD OF MANUFACTURING THE GRAPHENE-CONTAINING DEVICE USING BLOCK COPOLYMERS

摘要

A method of forming the graphene nanopattern (200P) is disclosed, which includes forming a graphene layer (200) on a substrate, forming a block copolymer layer (300) on the graphene layer as well as on a region of the substrate not covered by the graphene layer on at least one side of the graphene layer, forming a mask pattern (300M) from the block copolymer layer (300) by removing one of a plurality of first regions (30A) and a plurality of second regions (30B) of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask (300M). The block copolymer layer may be formed to directly contact the graphene layer, as well as the region of the substrate structure not covered by the graphene layer. The forming of the block copolymer layer may include using direct self assembly assisted by the edge portion of the graphene layer without using an additional topological guide.