| 发明名称 |
A STACKED NON-VOLATILE MEMORY DEVICE |
| 摘要 |
A stacked non-volatile memory device (100) comprises a plurality of bitline (110) and wordline (120) layers stacked on top of each other. The bitline (110) layers comprise a plurality of bitlines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation. |
| 申请公布号 |
EP3116024(A1) |
申请公布日期 |
2017.01.11 |
| 申请号 |
EP20160181656 |
申请日期 |
2007.06.14 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Lai, Erth-Kun;Lue, Hang-Ting;Hsieh, Kuang-Yeu |
| 分类号 |
H01L27/115;H01L21/28;H01L21/822;H01L21/8246;H01L21/84;H01L27/06;H01L27/12;H01L29/792 |
主分类号 |
H01L27/115 |
| 代理机构 |
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