发明名称 |
Methods for producing a thin film ferroelectric device using a two-step temperature process on an organic polymeric ferroelectric precursor material stacked between two conductive materials |
摘要 |
Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode. |
申请公布号 |
US9543322(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201514902114 |
申请日期 |
2015.06.04 |
申请人 |
SABIC Global Technologies B.V. |
发明人 |
Park Ji Hoon;Alshareef Husam N.;Odeh Ihab N.;Khan Mohd A. |
分类号 |
H01L27/115;H01L29/51;H01L21/28;H01L29/78;C09D127/16;H01L29/66;H01L21/02;H01L21/321;H01L37/02;H01L41/113;H01L41/193;H01L41/317 |
主分类号 |
H01L27/115 |
代理机构 |
Norton Rose Fulbright US LLP |
代理人 |
Norton Rose Fulbright US LLP |
主权项 |
1. A method for producing a thin film ferroelectric device, the method comprising:
(a) depositing an organic polymeric ferroelectric precursor material onto a first conductive material such that the organic polymeric ferroelectric precursor material has a first surface and an opposing second surface, wherein the first surface of the organic polymeric ferroelectric precursor material is in contact with the first conductive material; (b) depositing a second conductive material on the second surface of the organic polymeric ferroelectric precursor material to form a stack, wherein the organic polymeric ferroelectric precursor material is positioned at least partially between the first and second conductive materials; (c) subjecting the stack to a first temperature above a melting temperature of the organic polymeric ferroelectric precursor material to form an organic polymeric ferroelectric material having ferroelectric hysteresis properties; and (d) subjecting the stack to a second temperature below the melting temperature of the organic polymeric ferroelectric precursor material to densify the organic polymeric ferroelectric material and to obtain a thin film ferroelectric device. |
地址 |
Amsterdam NL |