Normally-off junction field-effect transistors and application to complementary circuits

摘要

A junction field-effect transistor (JFET) with a gate region that includes two separate sub-regions having material of different conductivity types and/or a Schottky junction that substantially suppresses gate current when the gate junction is forward-biased, as well as complementary circuits that incorporate such JFET devices.

主权项

1. A junction field effect transistor (JFET) comprising:
a channel region comprised of a crystalline material; and a gate region comprised of a hydrogenated silicon material; wherein:
the gate region includes a first gate sub-region and a second gate sub-region;the first gate sub-region forms a junction with the channel region;the second gate sub-region forms a junction with the first gate sub-region;the channel region and the second gate sub-region include material of a first conductivity type; andthe first gate sub-region includes material of a second conductivity type different from the first conductivity type.