发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer. |
申请公布号 |
US9543289(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201414781533 |
申请日期 |
2014.05.12 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Yao Noriaki;Abe Hitoshi |
分类号 |
H01L21/00;H01L27/02;H01L29/861;H01L29/66;H01L27/06;H01L21/265;H01L29/423;H01L29/78;H01L27/12;H01L21/02;H01L21/324;H01L21/822;H01L23/34;H01L29/167 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a semiconductor device comprising:
depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate, and the thin film semiconductor layer being deposited to a film thickness; ion-implanting first impurity ions into the thin film semiconductor layer such that the first impurity ions reach only a partial thickness, less than an entirety of the film thickness, of the thin film semiconductor layer; selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity per unit area more than a dose quantity per unit area of the first impurity ions; forming a diode for detecting temperature is formed by performing thermal treatment to activate the first and second impurity ions ion-implanted into the thin film semiconductor layer to thereby respectively form a first main electrode region having a first conductivity type and a second main electrode region having a second conductivity type in the thin film semiconductor layer, the first main electrode region and the second main electrode region being thinner than the film thickness. |
地址 |
Kawasaki JP |