发明名称 Integrated circuit and method for fabricating an integrated circuit equipped with a temperature probe
摘要 This integrated circuit comprises: a substrate,a first electrical conductor comprising a first end, the first electrical conductor being electrically insulated from the substrate,a second electrical conductor comprising a second end, the second electrical conductor being electrically insulated from the substrate and electrically insulated from the first electrical conductor except at the second end which is mechanically and electrically directly in contact with the first end to form an electrical junction.;The first and second ends are entirely buried to at least 5 μm depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 μV/K at 20° C. such that the combination of these first and second conductors forms a temperature probe.
申请公布号 US9543287(B2) 申请公布日期 2017.01.10
申请号 US201314135937 申请日期 2013.12.20
申请人 Commissariat à l'énergie atomique et aux énergies alternatives 发明人 Cheramy Severine
分类号 H01L23/58;H01L27/02;H01L23/34;H01L23/38;H01L23/498 主分类号 H01L23/58
代理机构 Occhiuti & Rohlicek LLP 代理人 Occhiuti & Rohlicek LLP
主权项 1. An apparatus that comprises an integrated circuit, wherein said integrated circuit comprises a substrate, an electronic component, a first electrical conductor, and a second electrical conductor, wherein said substrate extends in a substrate plane, wherein said substrate has a plurality of external substrate surfaces, wherein said electronic component is disposed at a location selected from the group consisting of inside one of said plurality of external substrate surfaces and on one of said plurality of external substrate surfaces, wherein said first electrical conductor comprises a first bump contact, wherein said first bump contact is on one of said plurality of external substrate surfaces, wherein said first electrical conductor comprises a first end, wherein said first electrical conductor is electrically insulated from said substrate, wherein said second electrical conductor comprises a second bump contact, wherein said second electrical conductor comprises a second end, wherein said second bump contact is on one of said plurality of external substrate surfaces, wherein said second electrical conductor is electrically insulated from said substrate, wherein said second electrical conductor is electrically insulated from said first electrical conductor except at said second end of the second conductor, wherein said second end of the second conductor is mechanically and electrically directly in contact with said first end of the first conductor to form an electrical junction, wherein said first and second ends are entirely buried to at least 5 μm deep inside said substrate relative to one of said plurality of external substrate surfaces, wherein said first and second ends are formed of different materials chosen to achieve a Seebeck coefficient of said junction having an absolute value that is greater than 1 μV/K at 20° C., and wherein a combination of said first and second conductors forms a temperature probe.
地址 Paris FR