发明名称 |
Stacked semiconductor package |
摘要 |
Provided is a stacked semiconductor package which minimizes a limitation on a design of a lower semiconductor chip due to a characteristic of an upper semiconductor chip stacked on the lower chip. The stacked semiconductor package includes a lower chip having a through electrode area in which a plurality of through electrodes are disposed; and at least one upper chip stacked on the lower chip and having a pad area in which a plurality of pads corresponding to the plurality of through electrodes are disposed. The pad area is disposed along a central axis bisecting an active surface of the upper chip. The central axis where the pad area of the upper chip is disposed is placed at a position which is shifted from a central axis in a longitudinal direction of an active surface of the lower chip. |
申请公布号 |
US9543231(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201514597183 |
申请日期 |
2015.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Choi Yun-seok;Kwon Hyeok-man;Jo Cha-jea;Cho Tae-je |
分类号 |
H01L25/00;H01L23/48;H01L25/065;H01L25/07;H01L23/31;H01L23/00 |
主分类号 |
H01L25/00 |
代理机构 |
Renaissance IP Law Group LLP |
代理人 |
Renaissance IP Law Group LLP |
主权项 |
1. A stacked semiconductor package comprising:
a lower chip having a through electrode area in which a plurality of through electrodes are disposed, said through electrode area arranged along a direction that is transverse to a longitudinal direction of an active surface of the lower chip; and at least one upper chip stacked on the lower chip and having a pad area in which a plurality of bonding pads corresponding to the plurality of through electrodes are disposed; wherein:
the lower chip comprises a function block area arranged apart from the through electrode area;a plurality of function blocks are disposed in the function block area;the active surface of the lower chip has a first length measured in the longitudinal direction and a second length measured in a transverse direction;the first length is greater than the second length;the through electrode area extends in the transverse direction of the active surface of the lower chip and has a first width measured in the longitudinal direction; anda length of each edge of at least one of the plurality of function blocks is longer than or equal to half of a difference between the first length and the first width. |
地址 |
KR |