Punch-through-stop after partial fin etch

摘要

A method of reducing current leakage in three-dimensional semiconductor devices due to short-channel effects includes providing a starting semiconductor structure, the structure including a semiconductor substrate having a n-type device region and a p-type device region, the p-type device region including an upper layer of p-type semiconductor material, a hard mask layer over both regions, and a mask over the structure for patterning at least one fin in each region. The method further includes creating partial fin(s) in each region from the starting semiconductor structure, creating a conformal liner over the structure, creating a punch-through-stop (PTS) in each region, causing each PTS to diffuse across a top portion of the substrate, and creating full fin(s) in each region from the partial fin(s).

主权项

1. A method, comprising:
providing a starting semiconductor structure, the structure comprising a semiconductor substrate having a n-type device region and a p-type device region, the p-type device region including an upper layer of p-type semiconductor material and a hard mask layer over both regions; creating at least one partial fin in each region; creating a punch-through-stop (PTS) in each region; causing each PTS in a respective region to diffuse across an entire top portion thereof and below a top surface of the substrate; and creating at least one full fin in each region from the at least one partial fin in each region.