Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer

摘要

According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.

主权项

1. A method for processing a carrier, the method comprising:
performing a dry etch process in a processing region of a processing chamber to remove a first material from the carrier by an etchant, the processing chamber comprising an exposed inner surface comprising aluminum and the etchant comprising a halogen; and, subsequently, performing a hydrogen plasma ash process in the same processing region of the processing chamber, thereby stripping a resist mask from the carrier, wherein the hydrogen plasma process is substantially free of oxygen.