MEMS device with a bonding layer embedded in the cap

摘要

Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.

主权项

1. A semiconductor device structure, comprising:
a substrate, wherein the substrate comprises a micro electro mechanical system (MEMS) substrate or a semiconductor substrate; a cap substrate disposed above the substrate, wherein the cap substrate comprises an extending portion extending from a bottom surface of the cap substrate towards the substrate; an eutectic alloy formed between the cap structure and the substrate, wherein at least two of the outer sidewalls of the eutectic alloy are in direct contact with the cap substrate; and a bonding layer formed between the cap structure and the substrate, wherein the bonding layer is in contact with the extending portion and the substrate, wherein the eutectic alloy is made of a first material and a second material, and the bonding layer is made of one of the first material and the second material.