Liquid crystal display device

摘要

A liquid crystal display device includes a first substrate on which a thin film transistor is formed. The liquid crystal display device includes a first transistor which has a gate electrode thereof formed on a side more remote from the first substrate than a semiconductor layer and has a drain electrode thereof connected to the drain line, a second transistor which is connected to the first transistor in series, and has a source electrode thereof electrically connected to a pixel electrode, and a light blocking layer which is formed between the semiconductor layer and the first substrate and blocks a backlight incident from a first substrate side. The light blocking layer is formed in an overlapping manner on the first transistor, blocks a backlight incident on a first transistor side, and allows a backlight incident on a second transistor side to pass therethrough.

主权项

1. A liquid crystal display device comprising:
a first substrate; gate lines extending in a X direction on the first substrate; drain lines extending in a Y direction on the first substrate; a thin film transistor of a top-gate-type and a multi-gate type outputting a video signal from one of the drain lines to a pixel electrode in synchronism with a scanning signal from one of the gate lines, the thin film transistor having a first semiconductor layer as a first channel and a second semiconductor layer as a second channel; a second substrate facing the first substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; a backlight arranged in an opposing side of the first substrate against a side of the first substrate which is formed with the thin film transistor; and a light blocking layer formed between the first semiconductor layer and the backlight without extending between the second semiconductor layer and the backlight, wherein the thin film transistor has a gate electrode formed on a side more remote from the first substrate than the first semiconductor layer and the second semiconductor layer in a cross-sectional view, the light blocking layer overlaps with the gate electrode, and the gate electrode has edges opposite to each other in a width direction of the one of the gate lines, located within an area of the light blocking layer between opposite sides in the width direction.