| 发明名称 | Wiring structure having interlayer insulating film and wiring line without a barrier layer between | ||
| 摘要 | Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C). | ||
| 申请公布号 | US9543191(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201314380306 | 申请日期 | 2013.02.21 |
| 申请人 | ZEON CORPORATION;TOHOKU UNIVERSITY | 发明人 | Nemoto Takenao;Saito Takehisa;Tomita Yugo;Matsumoto Hirokazu;Shirotori Akihide;Teramoto Akinobu;Gu Xun |
| 分类号 | H01L23/48;H01L21/00;H01L21/44;H01L21/31;H01L21/768;H01L23/532;H01L21/02;H01J37/32;H01L21/3105;H01L21/3205;H01L21/311 | 主分类号 | H01L23/48 |
| 代理机构 | Rothwell, Figg, Ernst & Manbeck, P.C. | 代理人 | Rothwell, Figg, Ernst & Manbeck, P.C. |
| 主权项 | 1. A semiconductor device comprising: an insulating film formed with a fluorinated carbon film and having a groove; and a wiring member formed of copper which is buried in the groove of the insulating film to form a wiring line of a damascene structure, wherein at least a portion of a front surface of the insulating film that contacts the wiring member includes a carbon-rich layer in which a carbon content is higher than a fluorine content. | ||
| 地址 | Tokyo JP | ||