Apparatus and method for removing challenging polymer films and structures from semiconductor wafers

摘要

The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.

主权项

1. A method for removing photoresist that is part of a wafer and is covered by a covering layer using a double soak and spray process sequence comprising the steps of:
immersing the wafer for a sufficient period of time in a first bath that contains a first solvent that is selected to dissolve the photoresist to cause heating of the wafer and swelling of the photoresist that underlies the covering layer; transferring the wafer using an automated transfer device such that the wafer is removed from the first bath and is delivered onto a first support that is part of a first spray station that is separate and spaced from the first bath; spraying the wafer with a first high pressure solvent for a sufficient period of time to cause penetration of the covering layer to provide fluid entry points to further dissolve the photoresist and to physically penetrate and break apart the covering layer formed on the photoresist; using the automated transfer device to remove the wafer from the first spray station and deliver the wafer to a second bath; immersing the wafer in the second bath for a sufficient period of time, the second bath containing a second solvent that is selected to dissolve the photoresist to allow diffusion of the second solvent into the photoresist that underlies the covering layer by means of the entry points resulting in further swelling and dissolution of the photoresist; transferring the wafer using the automated transfer device such that the wafer is removed from the second bath and is delivered onto a second support that is part of a second spray station that is separate and spaced from the second bath; and spraying the wafer with a second high pressure solvent for a sufficient period of time to further dissolve any remaining portions of the photoresist and remove any remaining pieces of the covering layer.