Self-aligned carbon nanotube transistor including source/drain extensions and top gate

摘要

A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

主权项

1. A carbon nanotube semiconductor device, comprising:
at least one carbon nanotube disposed on an insulator portion of a substrate, the at least one carbon nanotube including a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion; a first source/drain contact stack on the first doped source/drain portion and an opposing second source/drain contact stack on the second doped source/drain portion; and a replacement metal gate stack interposed between the first and second source/drain contact stacks and on the at least one carbon nanotube; wherein the first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.