Light emitting device

摘要

Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

主权项

1. A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; first and second contact electrodes disposed over the light emitting structure, the first and second contact electrodes ohmic-contacting the first and second conductive type semiconductor layers, respectively; an insulating layer insulating the first and second contact electrodes from each other and at least partially covering the first and second contact electrodes; a stress buffering layer disposed over the insulating layer; first and second bulk electrodes disposed over the light emitting structure and the stress buffering layer, the first and second bulk electrodes electrically connected to the first and second contact electrodes, respectively; and an insulation support covering side surfaces of the first and second bulk electrodes and at least partially exposing upper surfaces of the first and second bulk electrodes, wherein the first bulk electrode includes a protrusion part protruding from a side surface of the first bulk electrode toward the second bulk electrode, and the second bulk electrode includes a concave part depressed from a side surface of the second bulk electrode; wherein the insulating layer includes first and second insulating layers, the first insulating layer partially covers the second contact electrode and includes first and second opening parts each partially exposing the first conductive type semiconductor layer and the second contact electrode, the first contact electrode partially covers the first insulating layer, and the second insulating layer partially covers the first contact electrode and includes third and fourth opening parts each partially exposing the first and second contact electrodes.