Semiconductor light emitting device

摘要

A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.

主权项

1. A semiconductor light emitting device, comprising:
a substrate; a reflective layer including three or more porous layers disposed on the substrate, the three or more porous layers including at least two types of porous layers having different porosities alternately stacked; and a light emitting structure disposed above the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, wherein the reflective layer includes a first porous layer having a first porosity and a second porous layer having a second porosity lower than the first porosity, and the first porous layer has a resistivity higher than a resistivity of the second porous layer.