发明名称 |
High mobility devices and methods of forming same |
摘要 |
An embodiment method includes forming a first fin and a second fin over a semiconductor substrate. The first fin includes a first semiconductor strip of a first type, and the second fin includes a second semiconductor strip of the first type. The method further includes replacing the second semiconductor strip with a third semiconductor strip of a second type different than the first type. Replacing the second semiconductor strip includes masking the first fin using a barrier layer while replacing the second semiconductor strip and performing a chemical mechanical polish (CMP) on the third semiconductor strip using a slurry that planarizes the third semiconductor strip at a faster rate than the barrier layer. In some embodiments, the method may further include depositing a sacrificial layer over a wafer containing the first and second fins and performing a non-selective CMP to substantially level a top surface of the wafer. |
申请公布号 |
US9543417(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201414536119 |
申请日期 |
2014.11.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Su Huan-Chieh;Chen Cheng-Long;Jiang Ching-Hong;Wann Clement Hsingjen |
分类号 |
H01L21/8234;H01L29/66 |
主分类号 |
H01L21/8234 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method for forming a fin field effect transistor (finFET) comprising:
forming a first fin over a semiconductor substrate, the first fin comprising a first semiconductor strip of a first type; forming a second fin over the semiconductor substrate, the second fin comprising a second semiconductor strip of the first type; and replacing the second semiconductor strip with a third semiconductor strip of a second type different than the first type, wherein replacing the second semiconductor strip comprises:
masking the first fin using a barrier layer while replacing the second semiconductor strip; andperforming a chemical mechanical polish (CMP) on the third semiconductor strip using a slurry that planarizes the third semiconductor strip at a faster rate than the barrier layer; and forming one or more shallow trench isolation (STI) regions between the first fin and the second fin, wherein masking the first fin further comprises masking a first portion of the one or more STI regions and exposing a second portion of the one or more STI regions. |
地址 |
Hsin-Chu TW |