Device having sloped gate profile and method of manufacture

摘要

A semiconductor device having an open profile gate electrode, and a method of manufacture, are provided. A funnel-shaped opening is formed in a dielectric layer and a gate electrode is formed in the funnel-shaped opening, thereby providing a gate electrode having an open profile. In some embodiments, first and second gate spacers are formed alongside a dummy gate electrode. The dummy gate electrode is removed and upper portions of the first and second gate spacers are removed. The first and second gate spacers may be formed of different materials having different etch rates.

主权项

1. A method of forming a semiconductor device, the method comprising: providing a substrate forming a gate stack and gate spacers adjacent the gate stack; forming a first dielectric layer over the substrate adjacent the gate spacers; removing the gate stack and upper portions of the gate spacers, thereby forming a funnel-shaped opening, the funnel-shaped opening exposing a semiconductor material of the substrate between the gate spacers; and forming a gate electrode in the funnel-shaped opening, wherein the funnel shaped opening comprises a funnel slope of about 30° to about 45° relative to a major surface of the substrate.