| 发明名称 | Semiconductor device with field electrode structures, gate structures and auxiliary diode structures | ||
| 摘要 | A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. Gate structures between the field electrode structures control a current flow through the body zones. Auxiliary diode structures with a forward voltage lower than the first pn junctions are electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas. | ||
| 申请公布号 | US9543386(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201514849106 | 申请日期 | 2015.09.09 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Siemieniec Ralf;Blank Oliver;Hirler Franz;Vielemeyer Martin Henning |
| 分类号 | H01L29/66;H01L29/06;H01L29/739;H01L29/40;H01L29/10;H01L29/78;H01L29/861;H01L29/872 | 主分类号 | H01L29/66 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: field electrode structures extending in a direction vertical to a first surface in a semiconductor body; cell mesas formed from portions of the semiconductor body between the field electrode structures and including body zones forming first pn junctions with a drift zone; gate structures formed between the field electrode structures and configured to control a current flow through the body zones; and auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas. | ||
| 地址 | Villach AT | ||