MIM/RRAM structure with improved capacitance and reduced leakage current

摘要

Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode. The capacitor dielectric is made up of an amorphous oxide/nitride matrix and a plurality of metal or metal oxide/nitride nano-particles that are randomly distributed over the volume of amorphous oxide/nitride matrix.

主权项

1. A method of forming a metal-insulator-metal (MIM) capacitor:
providing a semiconductor substrate with a plurality of semiconductor devices arranged thereon, wherein an interconnect structure, which comprises a plurality of conductive and insulating layers that are formed one over another in alternating fashion, is formed over the semiconductor substrate to couple semiconductor devices to one another; forming a conductive lower capacitor electrode over the interconnect structure; performing a co-sputtering process to form a capacitor dielectric over the conductive lower capacitor electrode, wherein performing the co-sputtering process comprises sputtering an elemental material from a target that is a pure element, such that oxide or nitride forms on the conductive lower capacitor electrode from the elemental material; and forming a conductive upper capacitor electrode over the capacitor dielectric.