CMOS image sensors having a transfer gate electrode, and methods of fabricating CMOS image sensors having a transfer gate electrode

摘要

Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

主权项

1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a substrate including a pixel array and a peripheral circuit region; a photodiode and a floating diffusion region in the pixel array of the substrate; a transfer gate insulating layer and a transfer gate electrode on a portion of the substrate that is between the photodiode and the floating diffusion region; and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region, wherein the transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, wherein the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature shorter than the first radius of curvature, and wherein the transfer gate electrode further comprises a third edge that is rounded to have a third radius of curvature shorter than the first radius of curvature.