发明名称 |
Solid-state imaging device and electronic apparatus |
摘要 |
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions. |
申请公布号 |
US9543341(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201615219007 |
申请日期 |
2016.07.25 |
申请人 |
Sony Corporation |
发明人 |
Itonaga Kazuichiro;Matsumoto Shizunori |
分类号 |
H04N5/3745;H01L27/146;H04N5/357;H04N9/04;H04N5/374;H04N5/378 |
主分类号 |
H04N5/3745 |
代理机构 |
Sheridan Ross P.C. |
代理人 |
Sheridan Ross P.C. |
主权项 |
1. A solid-state imaging device comprising:
a first structural unit including a first transfer transistor group sharing a first floating diffusion, the first transfer transistor group including four transfer transistors arranged around the first floating diffusion; and a second structural unit including a second transfer transistor group sharing a second floating diffusion, the second transfer transistor group including four transfer transistors arranged around the second floating diffusion; wherein the first and second floating diffusions are coupled to each other in a first direction, wherein the first and second transfer transistor groups share at least an amplification transistor and a reset transistor, the amplification transistor coupled to a select transistor, wherein a select wiring coupled to a gate electrode of the select transistor extends along the first direction, and wherein a first power supply wiring coupled to a drain region of the reset transistor extends along a second direction different from the first direction. |
地址 |
Tokyo JP |