发明名称 Solid-state imaging device and electronic apparatus
摘要 A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
申请公布号 US9543341(B2) 申请公布日期 2017.01.10
申请号 US201615219007 申请日期 2016.07.25
申请人 Sony Corporation 发明人 Itonaga Kazuichiro;Matsumoto Shizunori
分类号 H04N5/3745;H01L27/146;H04N5/357;H04N9/04;H04N5/374;H04N5/378 主分类号 H04N5/3745
代理机构 Sheridan Ross P.C. 代理人 Sheridan Ross P.C.
主权项 1. A solid-state imaging device comprising: a first structural unit including a first transfer transistor group sharing a first floating diffusion, the first transfer transistor group including four transfer transistors arranged around the first floating diffusion; and a second structural unit including a second transfer transistor group sharing a second floating diffusion, the second transfer transistor group including four transfer transistors arranged around the second floating diffusion; wherein the first and second floating diffusions are coupled to each other in a first direction, wherein the first and second transfer transistor groups share at least an amplification transistor and a reset transistor, the amplification transistor coupled to a select transistor, wherein a select wiring coupled to a gate electrode of the select transistor extends along the first direction, and wherein a first power supply wiring coupled to a drain region of the reset transistor extends along a second direction different from the first direction.
地址 Tokyo JP