发明名称 |
Isolation structure, method for manufacturing the same, and semiconductor device having the structure |
摘要 |
The present invention provides an isolation structure for a semiconductor substrate and a method for manufacturing the same, as well as a semiconductor device having the structure. The present invention relates to the field of semiconductor manufacture. The isolation structure comprises: a trench embedded in a semiconductor substrate; an oxide layer covering the bottom and sidewalls of the trench, and isolation material in the trench and on the oxide layer, wherein a portion of the oxide layer on an upper portion of the sidewalls of the trench comprises lanthanum-rich oxide. By the trench isolation structure according to the present invention, metal lanthanum in the lanthanum-rich oxide can diffuse into corners of the oxide layer of the gate stack, thus alleviating the impact of the narrow channel effect and making the threshold voltage adjustable. |
申请公布号 |
US9543188(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201113142378 |
申请日期 |
2011.03.02 |
申请人 |
INSTITUTE OF MICROELECTONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Luo Zhijiong;Yin Haizhou;Zhu Huilong;Zhong Huicai |
分类号 |
H01L21/76;H01L21/762;H01L21/8234 |
主分类号 |
H01L21/76 |
代理机构 |
Troutman Sanders LLP |
代理人 |
Troutman Sanders LLP |
主权项 |
1. An isolation structure for a semiconductor device, comprising:
a trench embedded in a semiconductor substrate; an oxide layer covering a bottom and sidewalls of the trench; and isolation material in the trench and on the oxide layer, wherein only a region of the semiconductor substrate that is adjacent to an upper-half portion of the oxide layer on the sidewalls of the trench is a lanthanum-rich region and only the upper-half portion of the oxide layer on the sidewalls of the trench adjacent to the lanthanum-rich region comprises lanthanum-rich oxide. |
地址 |
Beijing CN |