发明名称 |
High bandgap III-V alloys for high efficiency optoelectronics |
摘要 |
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached. |
申请公布号 |
US9543468(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201113878738 |
申请日期 |
2011.10.12 |
申请人 |
Alliance for Sustainable Energy, LLC |
发明人 |
Alberi Kirstin;Mascarenhas Angelo;Wanlass Mark |
分类号 |
H01L33/04;H01L33/00;H01L33/12;H01L33/30;H01L33/32;B82Y20/00 |
主分类号 |
H01L33/04 |
代理机构 |
|
代理人 |
McIntyre Michael A. |
主权项 |
1. An optoelectronic device comprising:
a first device layer comprising an alloy consisting essentially of Al1-xInxP, wherein:
0.54≦x<1.0,the first device layer is at least partially ordered, andthe first device layer is configured to emit light; a substrate comprising at least one of GaAs, Si, Ge, InP, or GaP; and a first compositionally-graded buffer layer comprising:
a first step-grade buffer layer in contact with the substrate;a second step-grade buffer layer in contact with the first device layer, andbetween one and six additional step-grade buffer layers positioned between the substrate and the first device layer, wherein: the first step-grade buffer layer is substantially lattice-matched with the substrate, the second step-grade buffer layer is substantially lattice-matched with the first device layer, and each additional step-grade buffer layer has a lattice constant that is between the lattice constants of its two immediate closest neighboring step-grade buffer layers. |
地址 |
Golden CO US |