发明名称 High bandgap III-V alloys for high efficiency optoelectronics
摘要 High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached.
申请公布号 US9543468(B2) 申请公布日期 2017.01.10
申请号 US201113878738 申请日期 2011.10.12
申请人 Alliance for Sustainable Energy, LLC 发明人 Alberi Kirstin;Mascarenhas Angelo;Wanlass Mark
分类号 H01L33/04;H01L33/00;H01L33/12;H01L33/30;H01L33/32;B82Y20/00 主分类号 H01L33/04
代理机构 代理人 McIntyre Michael A.
主权项 1. An optoelectronic device comprising: a first device layer comprising an alloy consisting essentially of Al1-xInxP, wherein: 0.54≦x<1.0,the first device layer is at least partially ordered, andthe first device layer is configured to emit light; a substrate comprising at least one of GaAs, Si, Ge, InP, or GaP; and a first compositionally-graded buffer layer comprising: a first step-grade buffer layer in contact with the substrate;a second step-grade buffer layer in contact with the first device layer, andbetween one and six additional step-grade buffer layers positioned between the substrate and the first device layer, wherein: the first step-grade buffer layer is substantially lattice-matched with the substrate, the second step-grade buffer layer is substantially lattice-matched with the first device layer, and each additional step-grade buffer layer has a lattice constant that is between the lattice constants of its two immediate closest neighboring step-grade buffer layers.
地址 Golden CO US
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