| 发明名称 | Transistor having a heterojunction and manufacturing method thereof | ||
| 摘要 | A transistor includes a semiconductor substrate comprising a first region and a second region. The transistor further includes an emitter and a base disposed on the first region, and a collector disposed on the second region. The emitter includes a heterojunction. The heterojunction is at a same height as a junction between two different insulating materials that separate the emitter and the base. | ||
| 申请公布号 | US9543390(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201414513792 | 申请日期 | 2014.10.14 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Fumitake Mieno |
| 分类号 | H01L29/66;H01L29/16;H01L29/08;H01L29/267;H01L29/735;H01L29/10;H01L29/165 | 主分类号 | H01L29/66 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A transistor comprising: a semiconductor substrate comprising a first region and a second region; an emitter and a base disposed on the first region; and a collector disposed on the second region, wherein the emitter is disposed on an upper surface of the semiconductor substrate forming a heterojunction between the emitter and the upper surface of the semiconductor substrate, wherein the emitter and the base are spaced apart by a stacked layer including at least two different insulating materials, and wherein a junction between the at least two different insulating materials of the stacked layer has a substantially same height as a height of the heterojunction between the emitter and the upper surface of the semiconductor substrate. | ||
| 地址 | CN | ||