| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes interlayer insulating films spaced apart from each other and stacked over each other, and wherein first ends of the interlayer insulating films form a stepped structure; a slit penetrating the interlayer insulating films and dividing the interlayer insulating films into a plurality of stack structures; line patterns arranged between adjacent interlayer insulating films and separated from each other by the slit; pad patterns connected to the line patterns, formed over the first ends of the interlayer insulating films, and separated from each other by the slit; and at least one punch prevention pattern formed over sidewalls of the pad patterns adjacent to the slit and formed over the first ends of the interlayer insulating films. | ||
| 申请公布号 | US9543317(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201514712629 | 申请日期 | 2015.05.14 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Tae Kyung |
| 分类号 | H01L27/115;H01L29/10 | 主分类号 | H01L27/115 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: interlayer insulating films spaced apart from each other and arranged in a stack, wherein first ends of the interlayer insulating films form a stepped structure; a slit penetrating the interlayer insulating films and dividing the interlayer insulating films into a plurality of stack structures; line patterns arranged between adjacent interlayer insulating films; pad patterns connected to the line patterns and formed over the first ends of the interlayer insulating films, wherein the pad patterns are formed of a conductive material; and at least one punch prevention pattern formed over the first ends of the interlayer insulating films, the punch prevention pattern having a surface facing sidewalls of the pad patterns. | ||
| 地址 | Gyeonggi-do KR | ||