| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer. | ||
| 申请公布号 | US9543308(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201615009948 | 申请日期 | 2016.01.29 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Park Hoon;Kim Young-Seok;Lee Yeong-Cheol |
| 分类号 | H01L27/108;H01L21/764 | 主分类号 | H01L27/108 |
| 代理机构 | Lee & Morse P.C. | 代理人 | Lee & Morse P.C. |
| 主权项 | 1. A semiconductor device, comprising: a bit line structure on a substrate, the bit line structure including: a polysilicon layer pattern doped with impurities, anda metal layer pattern on the polysilicon layer pattern; a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness; a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer; and a capacitor on the capacitor contact structure. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||