Programming mode for multi-layer storage flash memory array and switching control method thereof

摘要

The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.

主权项

1. A switching control method of a programming mode for a multi-layer storage flash memory array, wherein the multi-layer storage flash memory array is operated by a flash memory controller, in a programming process for a flash memory, the flash memory controller selects to skip a part of logic pages for programming, and selects to skip least significant bit (LSB) pages in different directions, and switches to control one of at least three programming modes are comprised:
programming mode 1: in a programming process, selecting to skip a group of least significant bit (LSB) pages adjacent in a horizontal direction among physical pages of a multi-layer storage flash memory for programming, and reducing a programming times in the horizontal direction of the multi-layer storage flash memory array, a sequence number Npass of the skipped logic page being:Npass={4⁢i,1≤i≤63253,i=64 where i is a natural number, and 1≦i≦64; programming mode 2: in a programming process, selecting to skip a part of logic pages for programming, and in a programming process, skipping two groups of LSB pages adjacent in a diagonal direction among physical pages of a multi-layer storage flash memory, and reducing a programming times in the diagonal direction of the multi-layer storage flash memory array, a sequence number Npass of the skipped logic page being:Npass={4⁢i,i=2⁢n+14⁢i+1,i=2⁢n255,i=64,⁢⁢or,⁢Npass={4⁢i+1,i=2⁢n+14⁢i,i=2⁢n254,i=64 where n is a natural number, and 1≦n≦31; and, programming mode 3: in a programming process, skipping two adjacent groups of LSB pages separated by a physical line among physical pages of a multi-layer storage flash memory, and reducing a programming times in a vertical direction of the multi-layer storage flash memory array, a sequence number Npass of the skipped logic page being:Npass={4⁢i+1,i=2⁢n+14⁢i,i=2⁢n+1,⁢⁢or,⁢Npass={4⁢i+1,i=2⁢n4⁢i,i=2⁢n where n is a natural number, and 0≦n≦31.