发明名称 Sputtering target for magnetic recording film
摘要 Provided is a sputtering target for a magnetic recording film. The sputtering target has a peak intensity ratio (IG/ID) of a G-band to a D-band of 5.0 or more in Raman scattering spectrometry. It is an object of the present invention to produce a magnetic thin film having a granular structure without using a high cost co-sputtering apparatus and to provide a sputtering target, in particular, an Fe—Pt-based sputtering target for a magnetic recording film, where carbon particles are dispersed in the target. Since carbon is a material which is not susceptible to being sintered and is susceptible to form aggregates, a conventional carbon-containing sputtering target has the problem that detachment of carbon lumps occurs during sputtering to result in generation of a large number of particles on the film. The present invention also addresses the problem of providing a high density sputtering target that can overcome the disadvantages.
申请公布号 US9540724(B2) 申请公布日期 2017.01.10
申请号 US201314372236 申请日期 2013.05.22
申请人 JX Nippon Mining & Metals Corporation 发明人 Ogino Shini-ichi
分类号 C23C14/16;C23C14/34;H01J37/34;H01F41/18;C22C5/04;C22C38/00;C22C33/02;C22C32/00;C22C30/00;G11B5/64;G11B5/851;G11B5/65 主分类号 C23C14/16
代理机构 Howson & Howson, LLP 代理人 Howson & Howson, LLP
主权项 1. A sputtering target having a sintered body for a magnetic recording film comprising: a metal matrix having a composition comprising Pt in an amount of 5 mol % or more and 60 mol % or less and a balance of Fe; and carbon particles in a form of flaked graphite dispersed in the metal matrix in an amount of 10 mol % or more and 70 mol % or less, and having a peak intensity ratio (IG/ID) of 5.0 or more for a peak intensity of the G-band, IG, and a peak intensity of the D-band, ID, in Raman scattering spectrometry, wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of particles of at least one oxide additive selected from the group consisting of SiO2 ,Cr2O3, CoO, Ta2O5, B2O3,MgO, and Co3O4.
地址 Tokyo JP