Metal oxide TFT device and method for manufacturing the same

摘要

A method for manufacturing a metal oxide TFT device is provided. The method includes: selecting a substrate and forming a gate electrode on a first side of the substrate; sequentially depositing an insulating layer, a semiconductor layer, and a photoresist layer on the gate electrode; using the gate electrode as a photomask, exposing from a second side of the substrate and reserving the photoresist layer aligning to the gate electrode; depositing an electrode layer on the semiconductor layer and the reserved photoresist layer; stripping the reserved photoresist layer and lifting off the electrode layer stacked on the reserved photoresist layer; etching a part of the reserved electrode layer and the semiconductor layer, and forming a source electrode, a drain electrode, and a semiconductor island. The method realizes a self-alignment using the gate electrode as the photomask when forming the source, drain electrodes and the channel. Therefore, the manufacturing processes become simple and more accurate.

主权项

1. A method for manufacturing a pixel circuit, comprising:
selecting a substrate and forming a gate, a gate line, and a first storage capacitor electrode on a first side of the substrate; sequentially depositing an insulating layer, a metal oxide semiconductor layer, and a photoresist layer on the gate electrode, the gate line, the first storage capacitor electrode, and the first side of the substrate; using the gate electrode, the gate line, and the first storage capacitor electrode as photomasks, exposing from a second side of the substrate that opposes to the first side, and reserving parts of the photoresist layer that align to the gate electrode, the gate line, and the first storage capacitor electrode; depositing an electrode layer on the metal oxide semiconductor layer and the reserved photoresist layer; stripping the reserved photoresist layer and lifting off parts of the electrode layer that are stacked on the reserved photoresist layer, so as to expose parts of the metal oxide semiconductor layer that align to the gate electrode, the gate line, and the first storage capacitor electrode, and reserving other parts of the electrode layer; and etching a part of the reserved electrode layer and the metal oxide semiconductor layer, and forming a source electrode, a drain electrode, and a metal oxide semiconductor island.