Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus

摘要

A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer. A gate insulation layer covers the channel area. A gate electrode is disposed to be opposed to the channel area via the gate insulation layer. A first electrode is one of a source electrode and a drain electrode. A second electrode is the other of the source electrode and the drain electrode.

主权项

1. A semiconductor device comprising:
a first insulation layer which is disposed in a first area and a second area, the first insulation layer including a concave portion disposed in the first area; a semiconductor layer which includes a source region, a drain region, and a channel region; a gate insulation layer which covers the channel region; and a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer, wherein the concave portion is not disposed in the second area, the channel region of the semiconductor layer is disposed at the concave portion, and the source region of the semiconductor layer and the drain region of the semiconductor layer are disposed in the second area.