Memory structure

摘要

A memory structure includes N array regions and N page buffers coupled to the N array regions, respectively. N is an integer ≧2. Each of the N array regions includes a 3D array of a plurality of memory cells. The memory cells have a lateral distance d between two adjacent memory cells on a horizontal cell plane of the 3D array. Each of the N array regions further includes a plurality of conductive lines. The conductive lines are disposed over and coupled to the 3D array. The conductive lines have a pitch p, and p/d=⅕ to ½. The N array regions and the N page buffers are arranged on one line along an extension direction of the conductive lines.

主权项

1. A memory structure, comprising:
N array regions, wherein N is an integer ≧2, and each of the N array regions comprises: a 3D array of a plurality of memory cells, wherein the memory cells have a lateral distance d between two adjacent memory cells on a horizontal cell plane of the 3D array; and a plurality of conductive lines disposed over and coupled to the 3D array, wherein the conductive lines have a pitch p, and p/d=⅕ to ½; and N page buffers coupled to the N array regions, respectively; wherein the N array regions and the N page buffers are arranged on one line along an extension direction of the conductive lines; wherein N is an even number, and wherein the N array regions comprise a (2n−1)th array region and a 2nth array region, and n is an integer from 1 to N/2; and wherein the conductive lines of the (2n−1)th array region and the conductive lines of the 2nth array region are misaligned.