Method for curing flowable layer

摘要

Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a flowable layer over a substrate and heating the flowable layer to form a cured layer in a curing process. In addition, the curing process is performed under a pressure of over 2 atmospheres, and the flowable layer reacts with precursors in the flowable layer during the curing process.

主权项

1. A method for forming a semiconductor structure, comprising:
forming a flowable layer over a substrate; driving precursors into the flowable layer before a curing process under a pressure of over 2 atmospheres, wherein the flowable layer has a top portion and a bottom portion and the bottom portion is disposed between the top portion and the substrate such that the precursors enter and react with the top portion and with the bottom portion, wherein the precursors comprise O2, H2O, H2O2, O3 or a combination thereof; and heating the flowable layer to form a cured layer in the curing process, wherein the curing process is performed under a pressure of over 2 atmospheres, the flowable layer reacts with the precursors in the flowable layer during the curing process, and after the cured layer is formed, no heating process is performed to the cured layer.