Deposition of metal films based upon complementary reactions

摘要

A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal:
[M(SiR3)m(L1)p]n  (1)
wherein
M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal;R are each independently H, C1-C6 alkyl or —Si(R″)3;R″ are each independently H or C1-C6 alkyl;m is an integer from 1 to 3;n is a number representing the formation of aggregates or polymeric material;L1 is a neutral donor ligand;

L is a ligand;

p is an integer from 0 to 6; and
o is an integer representing the number of ligands bonded to MLo.

主权项

1. A method for forming a metal, the method comprising:
contacting a compound having formulae 1 or a surface modified with the compound having formula 1 with a compound having formula MLo to form a metal:
[M(Si(R0)3)m)L1)p]n  1wherein
M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R0 are each independently H or C1-C6 alkyl; R″ are each independently H or C1-C6 alkyl; m is an integer from 1 to 6; n is a number representing formation of aggregates or polymeric material; L is a ligand; L1 is a neutral donor ligand; p is an integer from 0 to 6; and o is an integer representing the number of ligands bonded to MLo.