Method of fabricating a semiconductor structure with a self-aligned contact

摘要

A method of fabricating a semiconductor structure includes the following steps: forming a first interlayer dielectric on a substrate; forming a gate electrode on the substrate so that the periphery of the gate electrode is surrounded by the first interlayer dielectric; forming a patterned mask layer comprising at least a layer of organic material on the gate electrode; forming a conformal dielectric layer to conformally cover the layer of organic material; and forming a second interlayer dielectric to cover the conformal dielectric layer.

主权项

1. A method of fabricating a semiconductor structure, comprising:
forming a dummy gate electrode on the substrate; forming a first interlayer dielectric on a substrate after the step of forming the dummy gate electrode; removing the dummy gate electrode to leave a trench in the first interlayer dielectric; forming a gate electrode in the trench, wherein a periphery of the gate electrode is surrounded by the first interlayer dielectric; forming a hard mask on a top surface of the gate electrode; forming a patterned mask layer comprising at least a layer of organic material on the gate electrode after the step of forming the hard mask; forming a conformal dielectric layer to conformally cover the layer of organic material; and forming a second interlayer dielectric to cover the conformal dielectric layer.