发明名称 |
Oxynitride semiconductor thin film |
摘要 |
The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes. |
申请公布号 |
US9543447(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201414773531 |
申请日期 |
2014.03.06 |
申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
Nishimura Eiichiro;Nakayama Tokuyuki;Iwara Masashi |
分类号 |
H01L29/786;H01L21/02;C01B21/082;H01L29/04;H01L29/24;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
Katten Muchin Rosenman LLP |
代理人 |
Katten Muchin Rosenman LLP |
主权项 |
1. An oxynitride semiconductor thin film comprising:
a crystalline oxynitride semiconductor comprising In as a main component, O, N, and added element M, where M is one or more element selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y, and rare-earth elements, the amount of added element M included in terms of atomic ratio M/(In+M) is greater than 0 but no greater than 0.20; a crystal structure of In2O3 phase of Bixbyite structure with N atoms solid-soluted in the In2O3 phase, the amount of N included in the crystalline oxynitride semiconductor being 3×1020 atoms/cm3 or more but less than 1×1022 atoms/cm3, and a carrier density of 1×1017 cm−3 or less, and a carrier mobility of 5 cm2/Vsec or more. |
地址 |
Tokyo JP |