发明名称 Semiconductor structure and manufacturing method thereof
摘要 A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.
申请公布号 US9543373(B2) 申请公布日期 2017.01.10
申请号 US201314061615 申请日期 2013.10.23
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liang Shih-Wei;Pan Hsin-Yu;Wu Kai-Chiang;Yang Ching-Feng;Liu Ming-Kai;Miao Chia-Chun
分类号 H01L23/31;H01L23/367;H01L23/00;H01L49/02;H01L25/065;H01L23/488;H01L21/48;H01L23/538;H05K1/18;H05K3/46;H01L23/522;H01L23/498 主分类号 H01L23/31
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A semiconductor structure, comprising: a substrate and a first circuit on the substrate; a metal structure comprising an active portion and a dummy portion, the active portion electrically coupled with the first circuit through a conductive plug, the dummy portion not being electrically coupled with any circuitry, the active portion and the dummy portion being on a same level of the metal structure; a semiconductor die bonded to the substrate through a first active bump via a conductive pad on an active surface of the semiconductor die, a passive surface of the semiconductor die contacting the dummy portion of the metal structure, wherein the passive surface is opposite to the active surface; a dummy bump connected to the dummy portion of the metal structure; and a molding compound between the substrate and the active surface of the semiconductor die and surrounding the conductive plug; wherein the dummy bump is surrounded by ambient air.
地址 Hsin-Chu TW