发明名称 |
Semiconductor structure and manufacturing method thereof |
摘要 |
A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device. |
申请公布号 |
US9543373(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201314061615 |
申请日期 |
2013.10.23 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liang Shih-Wei;Pan Hsin-Yu;Wu Kai-Chiang;Yang Ching-Feng;Liu Ming-Kai;Miao Chia-Chun |
分类号 |
H01L23/31;H01L23/367;H01L23/00;H01L49/02;H01L25/065;H01L23/488;H01L21/48;H01L23/538;H05K1/18;H05K3/46;H01L23/522;H01L23/498 |
主分类号 |
H01L23/31 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A semiconductor structure, comprising:
a substrate and a first circuit on the substrate; a metal structure comprising an active portion and a dummy portion, the active portion electrically coupled with the first circuit through a conductive plug, the dummy portion not being electrically coupled with any circuitry, the active portion and the dummy portion being on a same level of the metal structure; a semiconductor die bonded to the substrate through a first active bump via a conductive pad on an active surface of the semiconductor die, a passive surface of the semiconductor die contacting the dummy portion of the metal structure, wherein the passive surface is opposite to the active surface; a dummy bump connected to the dummy portion of the metal structure; and a molding compound between the substrate and the active surface of the semiconductor die and surrounding the conductive plug; wherein the dummy bump is surrounded by ambient air. |
地址 |
Hsin-Chu TW |