发明名称 Inductively coupled plasma processing apparatus
摘要 An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction.
申请公布号 US9543121(B2) 申请公布日期 2017.01.10
申请号 US201213451867 申请日期 2012.04.20
申请人 TOKYO ELECTRON LIMITED 发明人 Sasaki Kazuo;Tojo Toshihiro
分类号 C23C16/00;H01L21/306;H01J37/32 主分类号 C23C16/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. An inductively coupled plasma processing apparatus for performing plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber, the apparatus comprising: a high frequency antenna configured to generate the inductively coupled plasma in the plasma generation region, the high frequency antenna being divided into at least one inner high frequency antenna having a first closed loop and an outer high frequency antenna having a second closed loop that concentrically surrounds the first closed loop of the inner high frequency antenna; and a metal window provided between the plasma generation region and the high frequency antenna such that the metal window is disposed directly below the high frequency antenna, wherein the metal window is divided into multiple sections based on a first division scheme and a second division scheme, the first division scheme divides the metal window along at least one boundary that is between the inner high frequency antenna and the outer high frequency antenna such that the metal window is divided into at least a first portion, that is overlapped by the first closed loop of the inner high frequency antenna while not being overlapped by the second closed loop of the outer high frequency antenna, and a second portion, that is overlapped by the second closed loop of the outer high frequency antenna while not being overlapped by the first closed loop of the inner high frequency antenna, the first and second portions being electrically insulated from each other and the second division scheme further divides the entire metal window into multiple portions that increase in width moving outward from a center portion of the metal window based on boundaries which cross from the center portion of the metal window to an outermost perimeter of the metal window, the multiple portions demarcated by the second division scheme being electrically insulated from each other.
地址 Tokyo JP