发明名称 OLED device and manufacturing method thereof and display apparatus
摘要 An OLED device and a manufacturing method thereof and a display apparatus are provided. The OLED device comprises: a substrate, and a first electrode, an organic material function layer and a second electrode which are sequentially provided on the substrate. The OLED device further comprises an uneven layer provided between the first electrode and the substrate, and a surface of the uneven layer corresponding to the first electrode and away from the substrate is not even. The first electrode and/or the second electrode provided on a light output side of the OLED device comprise(s) a metal layer.
申请公布号 US9543539(B2) 申请公布日期 2017.01.10
申请号 US201414443855 申请日期 2014.09.18
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Ma Wenyu
分类号 H01L29/08;H01L51/52;H01L27/32;H01L51/56 主分类号 H01L29/08
代理机构 Ladas & Parry LLP 代理人 Ladas & Parry LLP
主权项 1. An OLED device, comprising a substrate, and a first electrode, an organic material function layer and a second electrode which are sequentially provided on the substrate, wherein the OLED device further comprises an uneven layer provided between the first electrode and the substrate, and a surface of the uneven layer corresponding to the first electrode and away from the substrate is not even; the first electrode and/or the second electrode provided on a light output side of the OLED device comprise(s) a metal layer; the uneven layer is a photoresist layer doped with small particles; the small particles are exposed from a surface of the photoresist layer corresponding to the first electrode and away from the substrate; a photoresist partially retained region and a photoresist completely retained region of the photoresist layer are formed by exposing and developing the substrate on which a photoresist thin film is formed with a half or gray tone mask, wherein the photoresist partially retained region corresponds to the first electrode and the small particles in the photoresist partially retained region are exposed, and the photoresist completely retained region corresponds to the other region; and a particle size of the small particles is less than 10 nm.
地址 Beijing CN