发明名称 Thin film transistor assembly, array substrate method of manufacturing the same, and display device
摘要 The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor. The light shielding layer and the source electrode and the drain electrode of the thin film transistor are formed in the same layer on the substrate. As the light shielding layer, the source electrode and the drain electrode of the thin film transistor and a data line may be formed on the substrate by using the same material layer through a single patterning process, times of performing patterning processes and the number of masks used may be reduced and thus manufacturing process and cost of the array substrate may be decreased.
申请公布号 US9543443(B2) 申请公布日期 2017.01.10
申请号 US201514777666 申请日期 2015.02.27
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Sun Shuang;Zhang Fangzhen;Niu Jing;Lv Zhijun
分类号 H01L29/786;H01L27/12;H01L29/417 主分类号 H01L29/786
代理机构 Kinney & Lange, P.A. 代理人 Kinney & Lange, P.A.
主权项 1. A thin film transistor assembly, comprising: a thin film transistor; and a light shielding layer, arranged between a source electrode and a drain electrode of the thin film transistor and configured to block exterior light from illuminating an active layer of the thin film transistor, wherein the light shielding layer and the source electrode and the drain electrode of the thin film transistor are formed in the same layer.
地址 Beijing CN