| 发明名称 | Group III nitride wafer and its production method | ||
| 摘要 | The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers. | ||
| 申请公布号 | US9543393(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201313834871 | 申请日期 | 2013.03.15 |
| 申请人 | SixPoint Materials, Inc.;Seoul Semiconductor Co., Ltd. | 发明人 | Hashimoto Tadao;Letts Edward;Hoff Sierra |
| 分类号 | H01L29/201;H01L29/20;C30B7/10;C30B29/40;C30B33/10;H01L21/02;C30B33/00 | 主分类号 | H01L29/201 |
| 代理机构 | Strategic Innovation IP Law Offices, P.C. | 代理人 | Strategic Innovation IP Law Offices, P.C. |
| 主权项 | 1. A group III nitride wafer having composition of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1), wherein the wafer is formed by roughening both surfaces using a mechanical process and the surfaces are chemically treated to visually distinguish, without instrumentation, one surface from another after said roughening and before chemically-mechanically polishing the wafer. | ||
| 地址 | Buellton CA US | ||