Organic photoelectronic device including a PN junction and image sensor

摘要

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.

主权项

1. An organic photoelectronic device, comprising:
a first electrode and a second electrode facing each other; and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by the following Chemical Formula 1, and the n-type semiconductor including a compound represented by the following Chemical Formula 2: wherein, in the Chemical Formula 1, X is one of oxygen (—O—) and sulfur (—S—), each of R1 to R11 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, and a combination thereof, and Y− is a halogen ion; wherein, in the Chemical Formula 2, each of R1 to R12 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, and a combination thereof, and X is an anion.