| 发明名称 | Integrated circuit devices and methods | ||
| 摘要 | An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum. | ||
| 申请公布号 | US9543248(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201514819159 | 申请日期 | 2015.08.05 |
| 申请人 | QUALCOMM Incorporated | 发明人 | Xu Jeffrey Junhao;Bao Junjing;Zhu John Jianhong;Song Stanley Seungchul;Mojumder Niladri Narayan;Yeap Choh Fei |
| 分类号 | H01L23/522;H01L23/532;H01L23/528;H01L21/768;B29C67/00;G05B19/418;B33Y50/02 | 主分类号 | H01L23/522 |
| 代理机构 | Toler Law Group | 代理人 | Toler Law Group |
| 主权项 | 1. An integrated circuit device, comprising: a first metal layer comprising aluminum; a second metal layer including an interconnect structure, wherein the interconnect structure includes a layer of first material including aluminum; an inter-diffusion layer including aluminum, the inter-diffusion layer proximate to the first metal layer and proximate to the layer of first material including aluminum; and a self-forming barrier layer including aluminum, the self-forming barrier layer proximate to a dielectric layer and the layer of first material including aluminum. | ||
| 地址 | San Diego CA US | ||