发明名称 Vapor deposition apparatus, deposition method using the same, and method of manufacturing organic light-emitting display apparatus
摘要 A vapor deposition apparatus for forming a deposition layer on a substrate includes a supply unit that is supplied with a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas does not constitute a raw material to form the deposition layer, a reaction space that is connected to the supply unit to be supplied with the first raw gas and the auxiliary gas, a plasma generator in the reaction space to convert at least a portion of the first raw gas into a radical form, and a first injection portion that is connected to the reaction space and that supplies at least a radical material of the first raw gas toward the substrate.
申请公布号 US9543518(B2) 申请公布日期 2017.01.10
申请号 US201414250697 申请日期 2014.04.11
申请人 Samsung Display Co., Ltd. 发明人 Kim Jae-Hyun;Huh Myung-Soo
分类号 H01L51/00;H01L51/56;C23C16/40;C23C16/455 主分类号 H01L51/00
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A deposition method for forming a deposition layer on a substrate, the method comprising: supplying a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas includes helium or neon and does not constitute a raw material to form the deposition layer, from a supply unit to a reaction space; generating plasma by operating a plasma generator disposed in the reaction space to convert at least a portion of the first raw gas into a first raw material having a radical form, wherein generating the plasma is carried out at an enemy below a first ionization enemy of the auxiliary gas such that the auxiliary gas remains substantially neutral when the first raw gas is converted into the first raw material in the radical form; supplying the first raw material in the radical form and the auxiliary gas through a connecting passage to an injection portion, wherein the connecting passage is between the reaction space and the injection portion, the connecting passage having a narrower width than the injection portion and the reaction space such that the raw gas and the auxiliary gas are induced to sufficiently stay in the reaction space to convert at least the portion of the first raw gas into the first raw material having the radical form; and supplying the first raw material in the radical form and the auxiliary gas from the injection portion to the substrate.
地址 Yongin, Gyeonggi-do KR