Thermoelectric conversion module and method of manufacturing the same

摘要

A p-type semiconductor block is made of a p-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. In addition, an n-type semiconductor block is made of an n-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. The p-type semiconductor block and the n-type semiconductor block are alternately arranged in such a way that the connection portion of the p-type semiconductor block is connected with the pillar portion of the n-type semiconductor block and the connection portion of the n-type semiconductor block is connected with the pillar portion of the p-type semiconductor block. The connection portions and tip-end portions of the pillar portions are made of a thermoelectric conversion material containing metal powder.

主权项

1. A thermoelectric conversion module, comprising:
a plurality of p-type semiconductor blocks, each being made of a p-type thermoelectric conversion material, each having a first pillar portion and a first connection portion laterally protruding from one end portion of the first pillar portion, and each containing metal powder in the first connection portion and a different end portion of the first pillar portion; and a plurality of n-type semiconductor blocks, each being made of an n-type thermoelectric conversion material, each having a second pillar portion and a second connection portion laterally protruding from one end portion of the second pillar portion, and each containing metal powder in the second connection portion and a different end portion of the second pillar portion, wherein the first connection portion of each p-type semiconductor block overlaps longitudinally and is connected with the different end portion of the second pillar portion of the corresponding n-type semiconductor block, the second connection portion of each n-type semiconductor block overlaps longitudinally and is connected with the different end portion of the first pillar portion of the corresponding p-type semiconductor block, so that the plurality of p-type semiconductor blocks and the plurality of n-type semiconductor blocks are alternately connected in series.